SYLLABUS
  EC25C01 – ELECTRON DEVICES
Semiconductor: Types, Conductivity, Electron energy levels and energy band diagram,
Carrier concentration, Mass action law. Characteristics and behavior of intrinsic
semiconductors. Variation in properties with temperature, Carrier drift and diffusion, Current
density equation, Excess carrier generation and recombination rates, Carrier life time.
Continuity equation.
Activity: Virtual demonstration of energy levels, Drift and diffusion current.

PN Junction Diodes: Energy band diagram of open-circulated PN junction, Forward and
reverse bias characteristics, Diode resistance. Transition and diffusion capacitance. Effect of
temperature on diode behavior, Applications of PN junction diodes.
Special Diodes: Zener diode – breakdown mechanisms and voltage regulation, Varactor diode,
Tunnel diode, Photo diode – construction, operation, and applications.
Activities: Virtual demonstration of characteristics of junction diodes, Design of a constant
voltage regulator using Zener Diode.

Bipolar Junction Transistors: Construction working, characteristics in CB, CE, and CC
configurations regions of operation, current gain, input/output characteristics, Early effect. Other
Devices: Multi-emitter transistor – construction and applications.
Practical: Input and Output characteristics of Characteristic of BJT.

Field Effect Transistors: JET – construction, working, characteristics, parameters, MOSFET,
MOS capacitor, depletion and enhancement, modes, nMOS and pMOS, threshold voltage,
transfer and output characteristics. CMOS – introduction and basic operation.
Practical: Input and Output characteristics of Characteristics of JET, MOSFET.

Thyristors: Shockley diode, Silicon Controlled Rectifier (SCR), TRIAC and DIAC –
operation and applications, Thyristor protection techniques.

Unijunction Transistor (UJT): Construction, characteristics and application as relaxation
oscillator.

Optoelectronic Devices: LED, LCD, Photo transistor, Opto-coupler – principle, characteristics
and applications. Power MOSFETs: Construction, switching characteristics and applications in
power circuits
Practical: VI characteristics of SCR, UJT.
Weightage: Continuous Assessment: 50%, End Semester Examinations: 50%
Assessment Methodology: Quiz (5%), Assignments (20%), Flipped Class (5%), Practical
(30%), Internal Examinations (40%)