SYLLABUS
EE25C05 : ELECTRONIC DEVICES AND CIRCUITS

UNIT – 1: SEMICONDUCTOR PHYSICS AND DIODES
Energy bands, carrier generation and recombination, drift and diffusion currents. PN
junction operation, ideal and real diode characteristics. Diode Applications: Rectifiers,
clippers, clampers, and voltage regulators.
UNIT – 2: BIPOLAR JUNCTION TRANSISTORS (BJTs)
Structure and modes of operation: Active, Cutoff, Saturation. BJT biasing techniques
and stability analysis. Small signal analysis and single-stage amplifier design.
UNIT – 3: FIELD EFFECT TRANSISTORS (FETs)
JFET and MOSFET structures, characteristics and parameters. FET biasing methods
and analog switching applications. Common source amplifier design and multistage
configurations.
UNIT – 4: FREQUENCY RESPONSE AND POWER AMPLIFIERS
Frequency response of amplifiers: low, mid, and high frequency. Decibel gain, Bode
plots, gain-bandwidth tradeoff. Power amplifiers: Class A, B, AB, C – operation and
efficiency.
UNIT – 5: FEEDBACK AMPLIFIERS AND OSCILLATORS
Positive and negative feedback, feedback topologies, gain enhancement. Oscillators –
Colpitts, Hartley, Crystal – design and analysis.